Please use this identifier to cite or link to this item:
https://idr.l3.nitk.ac.in/jspui/handle/123456789/11692Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Gowrish, Rao, K. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | Shivakumar, G.K. | |
| dc.date.accessioned | 2020-03-31T08:35:27Z | - |
| dc.date.available | 2020-03-31T08:35:27Z | - |
| dc.date.issued | 2013 | |
| dc.identifier.citation | Materials Science in Semiconductor Processing, 2013, Vol.16, 2, pp.269-273 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/11692 | - |
| dc.description.abstract | The effects of substrate temperature and post deposition annealing on the structural, optical and electrical properties of vacuum deposited ZnSe thin films are presented here. The chemical composition of the films varied drastically with substrate temperature which in turn caused changes in various properties of the films. The grain size of the films increased with substrate temperature and also after annealing. The electrical properties of the films were found to be varying as a function of chemical composition and grain size. 2012 Elsevier Ltd. | en_US |
| dc.title | Influence of substrate temperature and post deposition annealing on the properties of vacuum deposited ZnSe thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.