Please use this identifier to cite or link to this item:
https://idr.l3.nitk.ac.in/jspui/handle/123456789/12449Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Raveendra, Kiran, M. | - |
| dc.contributor.author | Ulla, H. | - |
| dc.contributor.author | Satyanarayan, M.N. | - |
| dc.contributor.author | Umesh, G. | - |
| dc.date.accessioned | 2020-03-31T08:39:17Z | - |
| dc.date.available | 2020-03-31T08:39:17Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Optical Materials, 2019, Vol.96, , pp.- | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/12449 | - |
| dc.description.abstract | Herein, we report the optoelectronic properties of hybrid diodes fabricated using vanadyl phthalocyanine (VOPc) and zinc oxide nanorods (ZNR) with the configuration: ITO/ZNR/VOPc/MoO3/Al. Vertically aligned ZnO nanorods were grown using a simple aqueous solution (AS) method as a function of growth temperature. The correlation between the morphology of ZNR films and the optoelectronic properties of the ZNR/VOPc hybrid devices was investigated. The results show that the hybrid diodes with ZNR films grown at 120 C offer the best optoelectronic properties. The higher photocurrent responsivity, Rph, (16.28 A/W) was achieved for devices with ZNR films grown at 120 C. This value is 25 times higher than the Rph value obtained for the devices made with ZnO nanoparticle films that were reported earlier. 2019 | en_US |
| dc.title | Optoelectronic properties of hybrid diodes based on vanadyl- phthalocyanine and zinc oxide nanorods thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 10.Optoelectronic properties.pdf | 2.41 MB | Adobe PDF |  View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.