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DC Field | Value | Language |
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dc.contributor.author | Sadananda, Kumar, N. | |
dc.contributor.author | Bangera, K.V. | |
dc.contributor.author | Anandan, C. | |
dc.contributor.author | Shivakumar, G.K. | |
dc.date.accessioned | 2020-03-31T08:41:59Z | - |
dc.date.available | 2020-03-31T08:41:59Z | - |
dc.date.issued | 2013 | |
dc.identifier.citation | Journal of Alloys and Compounds, 2013, Vol.578, , pp.613-619 | en_US |
dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/12692 | - |
dc.description.abstract | Undoped and Bi doped zinc oxide thin films were deposited on glass substrate at 450 C using spray pyrolysis technique. The X-ray diffraction studies shows that Bi doped ZnO films are polycrystalline hexagonal structure with a preferred orientation along (101) direction. Crystallites size of the films decreases with increasing doping concentration. Scanning electron microscope image shows change in the surface morphology. The composition of Zn, O and Bi elements in the undoped and Bi doped ZnO films were investigated by X-ray photoelectron spectroscopy. Bi doped ZnO thin films show a transparency nearly 75% in the visible region. The optical band gap of ZnO thin films reduces from 3.25 eV to 3.12 eV with an increase in Bi concentration from 0 to 5at.% respectively. Electrical conductivity of ZnO thin films increased from 0.156 to 6.02S/cm with increasing Bi dopant concentration from 0% to 5% respectively. 2013 Elsevier B.V. All rights reserved. | en_US |
dc.title | Properties of ZnO:Bi thin films prepared by spray pyrolysis technique | en_US |
dc.type | Article | en_US |
Appears in Collections: | 1. Journal Articles |
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