Please use this identifier to cite or link to this item: https://idr.l3.nitk.ac.in/jspui/handle/123456789/14598
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dc.contributor.authorGorre P.
dc.contributor.authorKumar R.
dc.contributor.authorSong H.
dc.contributor.authorKumar S.
dc.date.accessioned2021-05-05T09:23:31Z-
dc.date.available2021-05-05T09:23:31Z-
dc.date.issued2021
dc.identifier.citationLecture Notes in Electrical Engineering , Vol. 719 , , p. 117 - 132en_US
dc.identifier.uri10.1007/978-981-15-9865-4_7
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/14598-
dc.description.abstractThe chapter discusses the basic elements in the design of mm-wave CMOS Power Amplifier (PA) for phased arrays integration, focusing the next-generation 5G mobile communication. Power Amplifier design metrics, along with implementation of beam-forming phased arrays to merge power over-the-air are discussed in brief. The explanation begins with CMOS unique advantages, real-time handset challenges, system-level constraints, and design challenges are conceptually demonstrated with the help of a basic single-stage transistor Power Amplifier. © Springer Nature Singapore Pte Ltd. 2021.en_US
dc.titleMm-wave cmos power amplifiers for 5gen_US
dc.typeBook Chapteren_US
Appears in Collections:3. Book Chapters

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