Ultra low voltage, low power active-RC filter in 90 nm CMOS technology

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DC Field	Value	Language
dc.contributor.author	Yeshwanth Y.P.
dc.contributor.author	Prasad T.P.V.
dc.contributor.author	Mudadla V.
dc.contributor.author	Pavan
dc.contributor.author	Rekha S.
dc.date.accessioned	2021-05-05T10:16:26Z	-
dc.date.available	2021-05-05T10:16:26Z	-
dc.date.issued	2019
dc.identifier.citation	2019 IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics, DISCOVER 2019 - Proceedings , Vol. , , p. -	en_US
dc.identifier.uri	https://doi.org/10.1109/DISCOVER47552.2019.9007958
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/15103	-
dc.description.abstract	In this work, an ultra low voltage, second order low pass active-RC filter is designed in 90 nm CMOS process. A bulk-driven transconductor and a feed-forward compensated operational transconductance amplifier (OTA) are used as building blocks of the filter. Operating with a supply voltage of 0.5 V, filter exhibits a low pass Butterworth response with a cutoff frequency of 1 MHz. A mathematical model of the filter is developed using descriptor state-space equations for optimizing the filter response. The designed filter consumes a power as less as 91.99 μW with a figure of merit (FoM) of 3.39 fJ/pole. © 2019 IEEE.	en_US
dc.title	Ultra low voltage, low power active-RC filter in 90 nm CMOS technology	en_US
dc.type	Conference Paper	en_US
Appears in Collections:	2. Conference Papers

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