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  3. 7. Patents Published
Please use this identifier to cite or link to this item: https://idr.l3.nitk.ac.in/jspui/handle/123456789/18423
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dc.contributor.authorNikhil, K. S-
dc.contributor.authorManukrishna, V. R-
dc.contributor.authorNational Institute of Technology Karnataka, Surathkal-
dc.date.accessioned2024-12-19T14:03:02Z-
dc.date.available2024-12-19T14:03:02Z-
dc.date.issued2023-07-28-
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/18423-
dc.descriptionPatent Filed Date: 13.05.2023 Published Date: 28.07.2023en_US
dc.language.isoenen_US
dc.publisherIndian Patent Office, Chennaien_US
dc.relation.ispartofseries202341033746;-
dc.subjectGa2o3en_US
dc.subjectDrain Extended Fielden_US
dc.subjectTransistoren_US
dc.titleNormally Off Ga2o3 On Insulator Junction Less Drain Extended Field Effect Transistoren_US
dc.typeOtheren_US
Appears in Collections:7. Patents Published

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