Uniaxial stress induced band structure changes in h-SiB

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DC Field	Value	Language
dc.contributor.author	Manju, M.S.
dc.contributor.author	Ajith, K.M.
dc.contributor.author	Valsakumar, M.C.
dc.date.accessioned	2020-03-30T09:46:17Z	-
dc.date.available	2020-03-30T09:46:17Z	-
dc.date.issued	2018
dc.identifier.citation	AIP Conference Proceedings, 2018, Vol.1953, , pp.-	en_US
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/6869	-
dc.description.abstract	Uniaxial stress was applied along zigzag and armchair directions in compressive and tensile regime to see if there is any metal-semiconductor transition in SiB. Metallicity increased with increasing stress both in compression and tension in zigzag and armchair directions instead of a metal-semiconductor transition. SiB maintained energetical stability in the whole range of applied stress. � 2018 Author(s).	en_US
dc.title	Uniaxial stress induced band structure changes in h-SiB	en_US
dc.type	Book chapter	en_US
Appears in Collections:	2. Conference Papers

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