Please use this identifier to cite or link to this item: https://idr.l3.nitk.ac.in/jspui/handle/123456789/10191
Title: Characterization of p-CdTe/n-CdS hetero-junctions
Authors: Mahesha, M.G.
Bangera, K.V.
Shivakumar, G.K.
Issue Date: 2009
Citation: Materials Science in Semiconductor Processing, 2009, Vol.12, 3, pp.89-93
Abstract: Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.
URI: http://idr.nitk.ac.in/jspui/handle/123456789/10191
Appears in Collections:1. Journal Articles

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