Please use this identifier to cite or link to this item: https://idr.l3.nitk.ac.in/jspui/handle/123456789/7870
Title: Effect of pressure on the band structure of BC3
Authors: Manju, M.S.
Harikrishnan, G.
Ajith, K.M.
Valsakumar, M.C.
Issue Date: 2016
Citation: AIP Conference Proceedings, 2016, Vol.1731, , pp.-
Abstract: Density functional theory (DFT) calculations were carried out to study the effect of pressure on the band structure of two dimensional BC3 sheet. BC3 is a semiconductor at ambient conditions having a band gap of ~0.3 eV. Electronic structure calculations are carried out on BC3 at pressures of 5, 20, 50 and 100 GPa. The system shows a semiconductor - metal transition by the application of pressure without any structural transition. � 2016 Author(s).
URI: http://idr.nitk.ac.in/jspui/handle/123456789/7870
Appears in Collections:2. Conference Papers

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.