Please use this identifier to cite or link to this item: https://idr.l3.nitk.ac.in/jspui/handle/123456789/8674
Title: Optoelectronic properties of graphene silicon nano-texture
Authors: Brahmanandam, J.
Ajmalghan, M.
Abhilash, R.K.
Mahapatra, D.R.
Rahaman, M.R.
Hegde, G.M.
Issue Date: 2014
Citation: 2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings, 2014, Vol., , pp.-
Abstract: Graphene on silicon with silicon dioxide quantum dots is a promising opto-electronic material. The optical band gap and the corresponding optical conductivity are estimated using the density functional approach with the combination of molecular dynamics. The regular repeating unit cell of graphene silicon nano-texture is identified using the classical molecular dynamics simulations. Electronic calculations predict the optical band gap is around 0.2 eV and the optical conductivity is identified to be 0.3 times the quantum conductance. � 2014 IEEE.
URI: http://idr.nitk.ac.in/jspui/handle/123456789/8674
Appears in Collections:2. Conference Papers

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